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HORÁK, M.; STÖGER-POLLACH, M.
Original Title
The Čerenkov limit of Si, GaAs and GaP in electron energy loss spectrometry
English Title
Type
WoS Article
Original Abstract
Since the advent of monochromated electron energy loss spectrometry (EELS) the experimental detection of band gaps in semiconducting materials is of great importance. In the non-relativistic limit of this technique the onset of the inelastic signal represents the band gap. But due to relativistic energy losses, like Čerenkov losses and the corresponding light guiding modes, appearing at high beam energies the band gap is usually hidden. The highest beam energy, which does not excite relativistic losses in a certain material, is called the Čerenkov limit of the material. In this work the low loss EELS signals of Si, GaAs and GaP are measured at various beam energies and the calculated Čerenkov limits are experimentally confirmed.
English abstract
Keywords
Low voltage EELS; Band gap; Čerenkov radiation
Key words in English
Authors
RIV year
2016
Released
06.06.2015
ISBN
0304-3991
Periodical
ULTRAMICROSCOPY
Volume
157
Number
1
State
Kingdom of the Netherlands
Pages from
73
Pages to
78
Pages count
6
BibTex
@article{BUT115185, author="Michal {Horák} and Michael {Stöger-Pollach}", title="The Čerenkov limit of Si, GaAs and GaP in electron energy loss spectrometry", journal="ULTRAMICROSCOPY", year="2015", volume="157", number="1", pages="73--78", doi="10.1016/j.ultramic.2015.06.005", issn="0304-3991" }