Publication result detail

The experimental results of the bulk-driven quasi-floating-gate MOS transistor

KHATEB, F.

Original Title

The experimental results of the bulk-driven quasi-floating-gate MOS transistor

English Title

The experimental results of the bulk-driven quasi-floating-gate MOS transistor

Type

WoS Article

Original Abstract

This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) MOS transistor (MOST) that was presented in AEU - International Journal of Electronics and Communications in year 2014. The BD-QFG MOST offers high transconductance value and extended common mode voltage range (CMVR) all under low-voltage supply (LV) low-power consumption (LP) conditions. Based on this technique a differential difference current conveyor (DDCC) was designed and fabricated in Cadence platform using 0.35um CMOS AMIS process with total chip area 213um x 266um. The voltage supply and the power consumption are +-500mV and 37uW, respectively. The experimental result shows near rail-to-rail common mode voltage range.

English abstract

This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) MOS transistor (MOST) that was presented in AEU - International Journal of Electronics and Communications in year 2014. The BD-QFG MOST offers high transconductance value and extended common mode voltage range (CMVR) all under low-voltage supply (LV) low-power consumption (LP) conditions. Based on this technique a differential difference current conveyor (DDCC) was designed and fabricated in Cadence platform using 0.35um CMOS AMIS process with total chip area 213um x 266um. The voltage supply and the power consumption are +-500mV and 37uW, respectively. The experimental result shows near rail-to-rail common mode voltage range.

Keywords

Bulk-driven MOS; Quasi-floating-gate MOST; Low-voltage Low-power; Differential difference current conveyor.

Key words in English

Bulk-driven MOS; Quasi-floating-gate MOST; Low-voltage Low-power; Differential difference current conveyor.

Authors

KHATEB, F.

RIV year

2016

Released

02.01.2015

Publisher

ELSEVIER GMBH, URBAN & FISCHER VERLAG

Location

Germany

ISBN

1434-8411

Periodical

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

Volume

2015 (69)

Number

1, IF: 0. 601

State

Federal Republic of Germany

Pages from

462

Pages to

466

Pages count

5

URL

http://dx.doi.org/10.1016/j.aeue.2014.10.016

BibTex

@article{BUT109872,
  author="Fabian {Khateb}",
  title="The experimental results of the bulk-driven quasi-floating-gate MOS transistor",
  journal="AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS",
  year="2015",
  volume="2015 (69)",
  number="1, IF: 0. 601",
  pages="462--466",
  doi="10.1016/j.aeue.2014.10.016",
  issn="1434-8411",
  url="http://dx.doi.org/10.1016/j.aeue.2014.10.016"
}