Publication result detail

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.

Original Title

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

English Title

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

Type

Paper in proceedings (conference paper)

Original Abstract

This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.

English abstract

This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.

Keywords

noise, spectroscopy, Laser

Key words in English

noise, spectroscopy, Laser

Authors

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.

RIV year

2015

Released

12.05.2014

Publisher

IEEE Serbie

Location

Belgrade, Serbie

ISBN

978-1-4799-5297-7

Book

Proceedings of the International Conference on Microelectronics, ICM

ISBN

2159-1660

Periodical

International Conference on Microelectronics-MIEL

Volume

2014

Number

1

State

United States of America

Pages from

349

Pages to

352

Pages count

4

BibTex

@inproceedings{BUT107614,
  author="Zdeněk {Chobola} and Miroslav {Luňák} and Jiří {Vaněk} and Eduard {Hulicius}",
  title="Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements",
  booktitle="Proceedings of the International Conference on Microelectronics, ICM",
  year="2014",
  journal="International Conference on Microelectronics-MIEL",
  volume="2014",
  number="1",
  pages="349--352",
  publisher="IEEE Serbie",
  address="Belgrade, Serbie",
  doi="10.1109/MIEL.2014.6842161",
  isbn="978-1-4799-5297-7",
  issn="2159-1660"
}