Publication result detail

Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors

VLASSIS, S.; KHATEB, F.

Original Title

Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors

English Title

Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors

Type

WoS Article

Original Abstract

In this letter, a simple automatic tuning circuit is proposed which is suitable for controlling the very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2Mohm nominal value presents about +-0.6% variation for -20C to 80C temperature range, +-5% variation at process/temperature (P/T) corners and THD=-42dB for differential signals. The supply voltage was VDD=1V and the current consumption about 470nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35um CMOS process.

English abstract

In this letter, a simple automatic tuning circuit is proposed which is suitable for controlling the very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2Mohm nominal value presents about +-0.6% variation for -20C to 80C temperature range, +-5% variation at process/temperature (P/T) corners and THD=-42dB for differential signals. The supply voltage was VDD=1V and the current consumption about 470nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35um CMOS process.

Keywords

MOS-resistor

Key words in English

MOS-resistor

Authors

VLASSIS, S.; KHATEB, F.

RIV year

2015

Released

04.03.2014

Location

England

ISBN

0013-5194

Periodical

ELECTRONICS LETTERS

Volume

2014 (50)

Number

6, IF: 1.068

State

United Kingdom of Great Britain and Northern Ireland

Pages from

432

Pages to

434

Pages count

2

URL

http://dx.doi.org/10.1049/el.2013.4181

BibTex

@article{BUT105722,
  author="Spyridon {Vlassis} and Fabian {Khateb}",
  title="Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors",
  journal="ELECTRONICS LETTERS",
  year="2014",
  volume="2014 (50)",
  number="6, IF: 1.068",
  pages="432--434",
  doi="10.1049/el.2013.4181",
  issn="0013-5194",
  url="http://dx.doi.org/10.1049/el.2013.4181"
}