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ŠIK, O.; GRMELA, L.
Original Title
Photoconductivity of CdTe Semiconductor Radiation Detectors
English Title
Type
Peer-reviewed article not indexed in WoS or Scopus
Original Abstract
This paper presents the results of experimental studies of transport and noise characteristics of CdTe deterctors. The current – voltage (I-V) characteristics and noise spectral densities were measured at the room temperature in dark and illumination through the contact area. We found that in this sample are good ohmic contacts and then measured noise corresponds volume noise sources only. The dominant noise source is 1/f type. One sample met the criteria to assumed bz the Hooge model. The Hooge constant for this sample was found: 5.5x10^-2. This value is higher than 2x10^-3 proposed by the Hooge theory due to the contact noise sources. Nevertheless, this value is very close to the theoretical.
English abstract
Keywords
CdTe, noise, reliability
Key words in English
Authors
RIV year
2014
Released
16.11.2013
Publisher
International Scientific Academy of Engineering & Technology
Location
India
ISBN
2320-401X
Periodical
International Journal of Computer Science and Electronics Engineering
Volume
1
Number
5
State
Republic of India
Pages from
31
Pages to
34
Pages count
4
BibTex
@article{BUT103625, author="Ondřej {Šik} and Lubomír {Grmela}", title="Photoconductivity of CdTe Semiconductor Radiation Detectors", journal="International Journal of Computer Science and Electronics Engineering", year="2013", volume="1", number="5", pages="31--34", issn="2320-401X" }