Publication detail

Substrate Preparation for Manufacturing of Aluminum Nitride Layers

DALLAEVA, D. TOMÁNEK, P.

Original Title

Substrate Preparation for Manufacturing of Aluminum Nitride Layers

Type

journal article - other

Language

English

Original Abstract

Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition.

Keywords

aluminum oxide, aluminum nitride, dry etching

Authors

DALLAEVA, D.; TOMÁNEK, P.

RIV year

2013

Released

18. 11. 2013

Publisher

Univezitní 8, Plzeň, 306 14, Česká republika

Location

http://electroscope.zcu.cz

ISBN

1802-4564

Periodical

ElectroScope - http://www.electroscope.zcu.cz

Year of study

2013

Number

5

State

Czech Republic

Pages from

1

Pages to

5

Pages count

5

BibTex

@article{BUT103004,
  author="Dinara {Sobola} and Pavel {Tománek}",
  title="Substrate Preparation for Manufacturing of Aluminum Nitride Layers",
  journal="ElectroScope - http://www.electroscope.zcu.cz",
  year="2013",
  volume="2013",
  number="5",
  pages="1--5",
  issn="1802-4564"
}