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KHATEB, F.; KHATIB, N.; PROMMEE, P.; JAIKLA, W.; FUJCIK, L.
Original Title
Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique
English Title
Type
WoS Article
Original Abstract
This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit.
English abstract
Keywords
Floating-gate MOST; quasi-floating-gate MOST, bulk-driven MOST; transconductor.
Key words in English
Authors
RIV year
2014
Released
02.09.2013
Location
Singapore
ISBN
0218-1266
Periodical
JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS
Volume
2013 (22)
Number
8, IF: 0.238
State
Republic of Singapore
Pages from
1350073-1
Pages to
1350073-13
Pages count
13
URL
http://dx.doi.org/10.1142/S0218126613500734