Project detail
Preparation of phase-separated substrates for the growth of 2D materials' lateral heterojunctions.
Duration: 1.3.2023 — 28.2.2024
Funding resources
Vysoké učení technické v Brně - Vnitřní projekty VUT
On the project
The vision behind the project is engineering the immiscible alloy systems in terms of composition and film thickness to create the strip pattern on its surface. This pattern is an ideal substrate for growing the 2D lateral heterostructure materials. First, the immiscibale alloy systems (Ag-Fe and Ag-Rh) are deposited on the Pt substrate separetlly. Second, the sputtered samples are heated to get phase segregation pattern on the surface, and then the 2D lateral heterostructure materials (Graphene, h-BN, and Silicene) are grown on the pattern.
Mark
CEITEC VUT-J-23-8409
Default language
Czech
People responsible
Mirdamadi Khouzani Sayed Hossein - principal person responsible
Kolíbal Miroslav, prof. Ing., Ph.D. - fellow researcher
Units
Central European Institute of Technology BUT
- responsible department (31.1.2023 - 6.3.2023)
Fabrication and Characteris. of Nanostr.
- responsible department (6.3.2023 - not assigned)
Fabrication and Characteris. of Nanostr.
- beneficiary (1.1.2023 - 31.12.2023)
Responsibility: Mirdamadi Khouzani Sayed Hossein