Project detail

Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3

Duration: 1.6.2018 — 30.10.2018

Funding resources

Neveřejný sektor - Přímé kontrakty - smluvní výzkum, neveřejné zdroje

On the project

Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3

Keywords
cryogenycs, noise

Mark

SR18857066

Default language

English

People responsible

Holcman Vladimír, doc. Ing., Ph.D. - principal person responsible
Majzner Jiří, Ing., Ph.D. - fellow researcher
Sobola Dinara, doc. Mgr., Ph.D. - fellow researcher
Trčka Tomáš, Ing., Ph.D. - fellow researcher

Units

Department of Physics
- responsible department (30.10.2018 - not assigned)
division-FYZ-SIX
- beneficiary (30.10.2018 - not assigned)

Results

HOLCMAN, V.; MAJZNER, J.; TRČKA, T.; SOBOLA, D. Cryo Data Extraction STATEMENT OF WORK-The part #4. 2018. p. 1-85.
Detail

Responsibility: Holcman Vladimír, doc. Ing., Ph.D.