Publication detail

A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology

KLEDROWETZ, V. PROKOP, R. FUJCIK, L. HÁZE, J.

Original Title

A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology

Type

journal article in Web of Science

Language

English

Original Abstract

This paper presents a novel analog front-end for EMG sensor signal processing powered by 1 V. Such a low supply voltage requires specific design steps enabled using the 28 nm fully depleted silicon on insulator (FDSOI) technology from STMicroelectronics. An active ground circuit is implemented to keep the input common-mode voltage close to the analog ground and to minimize external interference. The amplifier circuit comprises an input instrumentation amplifier (INA) and a programmable-gain amplifier (PGA). Both are implemented in a fully differential topology. The actual performance of the circuit is analyzed using the corner and Monte Carlo analyses that comprise fifth-hundred samples for the global and local process variations. The proposed circuit achieves a high common-mode rejection ratio (CMRR) of 105.5 dB and a high input impedance of 11 GO with a chip area of 0.09 mm(2).

Keywords

common-mode rejection ratio (CMRR); fully differential difference amplifier (FDDA); driven-right-leg circuit; active ground circuit; fully depleted silicon on insulator (FDSOI); electromyography (EMG)

Authors

KLEDROWETZ, V.; PROKOP, R.; FUJCIK, L.; HÁZE, J.

Released

24. 3. 2023

Publisher

MDPI

Location

BASEL

ISBN

1424-8220

Periodical

SENSORS

Year of study

23

Number

7

State

Swiss Confederation

Pages from

1

Pages to

20

Pages count

20

URL

https://www.mdpi.com/1424-8220/23/7/3422

Full text in the Digital Library

http://hdl.handle.net/11012/213549

BibTex

@article{BUT183441,
  author="Vilém {Kledrowetz} and Roman {Prokop} and Lukáš {Fujcik} and Jiří {Háze}",
  title="A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology",
  journal="SENSORS",
  year="2023",
  volume="23",
  number="7",
  pages="1--20",
  doi="10.3390/s23073422",
  issn="1424-8220",
  url="https://www.mdpi.com/1424-8220/23/7/3422"
}