Publication detail

Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells

VENTOSINOS, F. KLUSÁČEK, J. FINSTERLE, T. KUNZEL, K. HAUG, F. HOLOVSKÝ, J.

Original Title

Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells

Type

journal article in Web of Science

Language

English

Original Abstract

We show that two-terminal multijunction cells interconnected by tunnel junctions are fairly immune to individual local shunts, thanks to the shunt quenching. Interestingly, they may still suffer from global shunts. We revise the paradigm of a multijunction cell as a simple serial connection of component cells. This paradigm remains valid only for multijunction cells with laterally conductive interlayers. Instead, a new equivalent circuit is proposed and verified by measurement and simulations. As a main approach, selective illumination is applied and the voltage is measured at the end terminals. The global shunt is seen as a shift from logarithmic to linear intensity response. The presence of tunnel junction is important for an optimum configuration of tandem structures such as metal-halide perovskite with crystalline silicon solar cell.

Keywords

Equivalent circuit; multijunction solar cells; shunting; solar cells; tandem solar cells; tunnel junction

Authors

VENTOSINOS, F.; KLUSÁČEK, J.; FINSTERLE, T.; KUNZEL, K.; HAUG, F.; HOLOVSKÝ, J.

Released

4. 6. 2018

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Location

PISCATAWAY

ISBN

2156-3381

Periodical

IEEE Journal of Photovoltaics

Year of study

8

Number

4

State

United States of America

Pages from

1005

Pages to

1010

Pages count

6

URL

https://ieeexplore.ieee.org/document/8371529

BibTex

@article{BUT164879,
  author="Federico {Ventosinos} and Jan {Klusáček} and Tomáš {Finsterle} and Karel {Kunzel} and Franz-Jozef {Haug} and Jakub {Holovský}",
  title="Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells",
  journal="IEEE Journal of Photovoltaics",
  year="2018",
  volume="8",
  number="4",
  pages="1005--1010",
  doi="10.1109/JPHOTOV.2018.2828850",
  issn="2156-3381",
  url="https://ieeexplore.ieee.org/document/8371529"
}