Publication detail

1.2 v Differential Difference Current Conveyor Using MIGD MOST Technique

PHATSORNSIRI, P TORTEANCHAI, U. RATTANASUTTIKAN, M. JONGCHANACHAVAWAT, W. KUMNGERN, M. KHATEB, F.

Original Title

1.2 v Differential Difference Current Conveyor Using MIGD MOST Technique

Type

conference paper

Language

English

Original Abstract

This paper presents a new differential difference current conveyor (DDCC) using multiple-input gate-driven MOS transistor (MIGD MOST) technique. The MIGD MOST technique can be reduced the number of transistor differential pair. The differential input stage is implemented by flipped voltage follower to obtain low power supply requirements. Thus, the proposed DDCC is capable to working with a supply voltage of 1.2 V and it consumes a 44.2 μW of power dissipation. The simulations were performed with PSPICE using the 0.18 μm CMOS technology to prove the workability of the new circuit

Keywords

differential difference current conveyor; low-voltage low-power; multiple-input MOS transistor

Authors

PHATSORNSIRI, P; TORTEANCHAI, U.; RATTANASUTTIKAN, M.; JONGCHANACHAVAWAT, W.; KUMNGERN, M.; KHATEB, F.

Released

24. 5. 2022

Publisher

IEEE

Location

Prachuap Khiri Khan, Thailand

ISBN

978-166-548-584-5

Book

19th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2022

Pages from

1

Pages to

4

Pages count

4

URL

BibTex

@inproceedings{BUT180778,
  author="PHATSORNSIRI, P and TORTEANCHAI, U. and RATTANASUTTIKAN, M. and JONGCHANACHAVAWAT, W. and KUMNGERN, M. and KHATEB, F.",
  title="1.2 v Differential Difference Current Conveyor Using MIGD MOST Technique",
  booktitle="19th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2022",
  year="2022",
  pages="1--4",
  publisher="IEEE",
  address="Prachuap Khiri Khan, Thailand",
  doi="10.1109/ECTI-CON54298.2022.9795466",
  isbn="978-166-548-584-5",
  url="https://ieeexplore.ieee.org/document/9795466"
}