Publication detail

(V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance

BIOLEK, D. KOLKA, Z. BIOLKOVÁ, V. BIOLEK, Z. KVATINSKY, S.

Original Title

(V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance

Type

journal article in Web of Science

Language

English

Original Abstract

The paper introduces a set of models of memristive devices for a reliable, accurate and fast analysis of large networks in the SPICE (Simulation Program with Integrated Circuit Emphasis) environment. The modeling starts from the recently introduced TEAM (ThrEshold Adaptive Memristor Model) and VTEAM (Voltage ThrEshold Adaptive Memristor Model). A number of improvements are made towards the stick effect elimination and other numerical renements to make the analysis of large networks fast and accurate. A set of models are proposed that utilize the synergy of several techniques such as window asymmetrization, integration with saturation, state equation preprocessing, scaling, and smoothing. The performance of models is tested in Cadence PSPICE 17.2 and particularly in HSPICE v2017, the latter on a large-scale CNN (Cellular Nonlinear Network) for detecting edges of binary images. The simulations manifest the usability of developed models for fast and reliable operation in networks containing more than one million nodes.

Keywords

Memristor; VTEAM; window function; stick effect; SPICE; cellular nonlinear network

Authors

BIOLEK, D.; KOLKA, Z.; BIOLKOVÁ, V.; BIOLEK, Z.; KVATINSKY, S.

Released

25. 2. 2021

Publisher

IEEE

Location

USA

ISBN

2169-3536

Periodical

IEEE Access

Year of study

9

Number

2

State

United States of America

Pages from

30242

Pages to

30255

Pages count

14

URL

https://ieeexplore.ieee.org/document/9354151

Full text in the Digital Library

http://hdl.handle.net/11012/196418

BibTex

@article{BUT170268,
  author="Dalibor {Biolek} and Zdeněk {Kolka} and Viera {Biolková} and Zdeněk {Biolek} and Shahar {Kvatinsky}",
  title="(V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance",
  journal="IEEE Access",
  year="2021",
  volume="9",
  number="2",
  pages="30242--30255",
  doi="10.1109/ACCESS.2021.3059241",
  issn="2169-3536",
  url="https://ieeexplore.ieee.org/document/9354151"
}