Publication detail

Advanced VLSI Circuits Simulation

KOCINA, F. KUNOVSKÝ, J.

Original Title

Advanced VLSI Circuits Simulation

Type

conference paper

Language

English

Original Abstract

The paper deals with very accurate and effective simulation of Complementary Metal-Oxide-Semiconductor (CMOS) transistors which are used to construct basic logic gates (inverter, NAND and NOR) and their composites (XOR, AND, OR). The transistors are substituted by a  resistor-capacitor (RC) circuit and the circuit is described by a system of differential algebraic equations (DAEs). These equations are numerically solved by the variable-step, variable-order Modern Taylor Series Method (MTSM). The same approach can be used for VLSI simulation - it was implemented by the corresponding author in a general purpose programming language. This approach is faster than the state of the art (SPICE) and uses less memory.

Keywords

circuit simulation, VLSI circuits, Taylor series method, initial value problems

Authors

KOCINA, F.; KUNOVSKÝ, J.

Released

17. 7. 2017

Publisher

Institute of Electrical and Electronics Engineers

Location

Genoa

ISBN

978-1-5386-3250-5

Book

Proceedings of the 2017 International Conference on High Performance Computing & Simulation (HPCS 2017)

Pages from

526

Pages to

533

Pages count

8

URL

https://ieeexplore.ieee.org/document/8035123

BibTex

@inproceedings{BUT163432,
  author="Filip {Kocina} and Jiří {Kunovský}",
  title="Advanced VLSI Circuits Simulation",
  booktitle="Proceedings of the 2017 International Conference on High Performance Computing & Simulation (HPCS 2017)",
  year="2017",
  pages="526--533",
  publisher="Institute of Electrical and Electronics Engineers",
  address="Genoa",
  doi="10.1109/HPCS.2017.84",
  isbn="978-1-5386-3250-5",
  url="https://ieeexplore.ieee.org/document/8035123"
}