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MIKA, F. FRANK, L.
Original Title
QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION
Type
conference paper
Language
English
Original Abstract
The dopant concentration in semiconductor is quantitatively determined by means of secondary electron emission. Determination is based on measurement of the secondary electron contrast in an electron optical image, observed between differently doped regions. Explanation of the contrast mechanism is proposed on the basis of experimental data collected in a low energy scanning electron microscope.
Keywords
Dopant concentration, SE emission
Authors
MIKA, F.; FRANK, L.
Released
1. 1. 2004
ISBN
80-214-2636-5
Book
Proceedings of the 10th conference STUDENT EEICT 2004
Edition number
1
Pages from
646
Pages to
650
Pages count
5
BibTex
@inproceedings{BUT13951, author="Filip {Mika} and Luděk {Frank}", title="QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION", booktitle="Proceedings of the 10th conference STUDENT EEICT 2004", year="2004", number="1", pages="5", isbn="80-214-2636-5" }