Publication detail

QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION

MIKA, F. FRANK, L.

Original Title

QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION

Type

conference paper

Language

English

Original Abstract

The dopant concentration in semiconductor is quantitatively determined by means of secondary electron emission. Determination is based on measurement of the secondary electron contrast in an electron optical image, observed between differently doped regions. Explanation of the contrast mechanism is proposed on the basis of experimental data collected in a low energy scanning electron microscope.

Keywords

Dopant concentration, SE emission

Authors

MIKA, F.; FRANK, L.

Released

1. 1. 2004

ISBN

80-214-2636-5

Book

Proceedings of the 10th conference STUDENT EEICT 2004

Edition number

1

Pages from

646

Pages to

650

Pages count

5

BibTex

@inproceedings{BUT13951,
  author="Filip {Mika} and Luděk {Frank}",
  title="QUANTITATIVE PROFILING OF DOPANT CONCENTRATION IN SEMICONDUCTOR BY SECONDARY ELECTRON EMISSION",
  booktitle="Proceedings of the 10th conference STUDENT EEICT 2004",
  year="2004",
  number="1",
  pages="5",
  isbn="80-214-2636-5"
}