Publication detail

CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR

MIKA, F. FRANK, L.

Original Title

CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR

Type

conference paper

Language

English

Original Abstract

The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping.A part of the study reported here was oriented to determining the relation between the p/n contrast and the polar angle of signal emission.

Keywords

emission angle, dopant concentration, SEM,

Authors

MIKA, F.; FRANK, L.

Released

7. 12. 2004

Location

Brno

ISBN

80-239-3246-2

Book

Recent Trends in charged particle optics and surface physics instrumentation

Edition number

1

Pages from

51

Pages to

52

Pages count

2

BibTex

@inproceedings{BUT11305,
  author="Filip {Mika} and Luděk {Frank}",
  title="CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR",
  booktitle="Recent Trends in charged particle optics and surface physics instrumentation",
  year="2004",
  number="1",
  pages="2",
  address="Brno",
  isbn="80-239-3246-2"
}