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MIKA, F. FRANK, L.
Original Title
CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR
Type
conference paper
Language
English
Original Abstract
The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping.A part of the study reported here was oriented to determining the relation between the p/n contrast and the polar angle of signal emission.
Keywords
emission angle, dopant concentration, SEM,
Authors
MIKA, F.; FRANK, L.
Released
7. 12. 2004
Location
Brno
ISBN
80-239-3246-2
Book
Recent Trends in charged particle optics and surface physics instrumentation
Edition number
1
Pages from
51
Pages to
52
Pages count
2
BibTex
@inproceedings{BUT11305, author="Filip {Mika} and Luděk {Frank}", title="CONTRAST GENERATION IN LOW ENERGY SEM IMAGING OF DOPED SEMICONDUCTOR", booktitle="Recent Trends in charged particle optics and surface physics instrumentation", year="2004", number="1", pages="2", address="Brno", isbn="80-239-3246-2" }