The objective of this project is to characterize the microstructural changes in AlN/Si{111} heterostructures for the thicknesses of AlN films of 5, 10, 20, 50 nm. For each film thickness, several methodologies will be used to identify the density of individual dislocation types. A technique of Electron Beam Induced Current (EBIC) in scanning electron microscope (SEM) will be used to characterize the electrical activity of AlN surfaces, in particular to quantify the drop of current around dislocations. Thanks to Nenovision new EBIC technique will be used to study dislocations.

CEITEC VUT-J-20-6385

Czech

Pongrácz Jakub, Ing. - principal person responsible
Gröger Roman, doc. Ing., Ph.D. et Ph.D. - fellow researcher

Science Support Office
- responsible department (11.3.2020 - not assigned)
Science Support Office
- responsible department (1.1.2020 - 31.12.2020)
Central European Institute of Technology BUT
- beneficiary (1.1.2020 - 31.12.2020)

PONGRÁCZ, J.; VACEK, P.; GRÖGER, R. Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid. JOURNAL OF APPLIED PHYSICS, 2023, vol. 134, no. 19, 11 p. ISSN: 1089-7550.
Detail

Responsibility: Pongrácz Jakub, Ing.