Detail publikace

Statistics of Impact Ionization Processes in GaAsP P-N Junctions

KOKTAVÝ, P.

Originální název

Statistics of Impact Ionization Processes in GaAsP P-N Junctions

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In the present paper, a model which is based on Birth-and-Death type Markovian processes, is proposed as a tool for statistical description of strong-field impact ionization in GaAs0.6P0.4 diode p-n junctions. This process is termed one-dimensional stochastic generation – recombination (G-R) process. The model applies to materials in which the value of a, the impact ionization coefficient, may be considered having the same value for both conduction electrons and holes, whose strong-field drift velocity has the same value for both charge carrier types. As a random quantity to analyse, we take the total number of free charge carriers N(t) in the ionization region, which is fluctuating due to the impact ionization random process and due to the charge carrier random flow-out of the ionization region. We start from the continuity equation for statistical mean values of charge carrier concentrations, to draw up a differential equation for the statistical mean value of N(t), from which wee will derive the conditions for the charge carrier multiplication and for a transition to an avalanche process. Furthermore, we draw up G-R statistical process postulates, from which differential equations for the probability of the system to be in a state with the total carrier number N, as well as for the transition probabilities into another state, are resulting. This discrete process may be approximated with a continuous process, for which probability densities, power spectral density and correlation function may be determined. Thus suggested model provides a complete statistical description of the process in question, from which we may draw theoretical conclusions similar to those derived with the help of other methods for different semiconductor materials.

Klíčová slova

Microplasma noise, Impulse noise, GaAsP, PN junction, Generation-recombination process

Autoři

KOKTAVÝ, P.

Rok RIV

2003

Vydáno

18. 8. 2003

Nakladatel

CNRL, s.r.o.

Místo

Prague

ISBN

80-239-1055-1

Kniha

Proceedings of the 17th International Conference “Noise and Fluctuation” ICNF 2003

Strany od

441

Strany do

444

Strany počet

4

BibTex

@inproceedings{BUT9238,
  author="Pavel {Koktavý}",
  title="Statistics of Impact Ionization Processes in GaAsP P-N Junctions",
  booktitle="Proceedings of the 17th International Conference “Noise and Fluctuation” ICNF 2003",
  year="2003",
  pages="4",
  publisher="CNRL, s.r.o.",
  address="Prague",
  isbn="80-239-1055-1"
}