Detail publikace

Modelling of the Czochralski flow

FRANCŮ, J.

Originální název

Modelling of the Czochralski flow

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Czochralski method of industrial production of silicon single crystal consists in pulling up the single crystal from Silicon melt. The flow of the melt during this production is called Czochralski flow. Its character determines concentration of desired oxygen impurity in the crystal. The mathematical description of the Czochralski flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), heat convection-conduction equation, convection-diffusion equation for oxygen impurity and an equation describing magnetic field effect. The paper contains derivation of the model, its weak and operator formulation, its justification and proof of existence of solution to the both stationary and evolutionary problems.

Klíčová slova

Czochralski flow, mathematical modelling, weak formulation

Autoři

FRANCŮ, J.

Rok RIV

1998

Vydáno

1. 1. 1998

ISSN

1085-3375

Periodikum

Abstract and Applied Analysis

Ročník

3

Číslo

1-2

Stát

Spojené státy americké

Strany od

1

Strany do

40

Strany počet

40

BibTex

@article{BUT38838,
  author="Jan {Franců}",
  title="Modelling of the Czochralski flow",
  journal="Abstract and Applied Analysis",
  year="1998",
  volume="3",
  number="1-2",
  pages="1--40",
  issn="1085-3375"
}