Detail publikace

Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors

ŠIKULA, J. SEDLÁKOVÁ, V. HLÁVKA, J. HÖSCHEL, P. SITA, Z. ZEDNÍČEK, T. TACANO, M. HASHIGUCHI, S.

Originální název

Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The aim of this paper is to characterize the active region quality of NbO and Ta capacitors. This method for assesment of defects in active region of NbO and Ta capacitors is based on the evaluation of VA and noise characteristics and theirs temperature dependences.

Klíčová slova

Low frequency noise, NbO, Ta

Autoři

ŠIKULA, J.; SEDLÁKOVÁ, V.; HLÁVKA, J.; HÖSCHEL, P.; SITA, Z.; ZEDNÍČEK, T.; TACANO, M.; HASHIGUCHI, S.

Rok RIV

2005

Vydáno

1. 1. 2005

ISSN

0887-7491

Periodikum

Capacitor and Resistor Technology

Ročník

2005

Číslo

10

Stát

Spojené státy americké

Strany od

210

Strany do

215

Strany počet

6

BibTex

@inproceedings{BUT31369,
  author="Josef {Šikula} and Vlasta {Sedláková} and Jan {Hlávka} and Pavel {Höschel} and Zdeněk {Sita} and Tomáš {Zedníček} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors",
  booktitle="25th Capacitor and Resistor Technology Symposium",
  year="2005",
  journal="Capacitor and Resistor Technology",
  volume="2005",
  number="10",
  pages="6",
  issn="0887-7491"
}