Detail publikace

Next-generation photocatalytic system: Ga2O3-modified Ga Nanoislands on graphene for H2 production

BARTOŠÍK, M. MACH, J., EDELMANNOVÁ M. F., KOČÍ, K.

Originální název

Next-generation photocatalytic system: Ga2O3-modified Ga Nanoislands on graphene for H2 production

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Study investigates Ga2O3/Ga on Graphene/SiO2/Si, prepared via temperature-controlled growth of Ga, for photocatalytic hydrogen generation, marking the first exploration of this system for such purpose. Thin surface ultra-wide band gap Ga2O3 layer effectively photoemits electron-hole pairs under UVC and the metallic Ga cores enhance electric field separating charge carriers by formation of localized surface plasmon (LSP) resonances. These effects increase hydrogen yields. Computational analysis of LSP-induced electric field enhancement quantitatively supports proposed fundamental mechanism underlying sample's photoactivity. The most active photocatalyst (Ga-M) with medium-size Ga particles (radius 14 nm) exhibited ten thousand times higher activity per gram than commercial TiO2.

Klíčová slova

Photocatalysis; Hydrogen generation; Ga material; Water splitting

Autoři

BARTOŠÍK, M.; MACH, J., EDELMANNOVÁ M. F., KOČÍ, K.

Vydáno

24. 5. 2024

Nakladatel

ELSEVIER

Místo

AMSTERDAM

ISSN

2950-6492

Periodikum

Applied Catalysis O: Open

Ročník

191

Číslo

206944

Stát

Nizozemsko

Strany od

1

Strany do

8

Strany počet

8

URL

https://www.sciencedirect.com/science/article/pii/S2950648424000300

BibTex

@article{BUT197232,
  author="Miroslav {Bartošík} and Jindřich {Mach}",
  title="Next-generation photocatalytic system: Ga2O3-modified Ga Nanoislands on graphene for H2 production",
  journal="Applied Catalysis O: Open",
  year="2024",
  volume="191",
  number="206944",
  pages="1--8",
  doi="10.1016/j.apcato.2024.206944",
  issn="2950-6492",
  url="https://www.sciencedirect.com/science/article/pii/S2950648424000300"
}