Detail publikačního výsledku

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

LÉTAL, P., BRÜSTLOVÁ, J., TOMÁNEK, P., DOBIS, P., GRMELA, L.

Originální název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

Anglický název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.

Anglický abstrakt

Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.

Klíčová slova

near-field optics, spectroscopy, interface, semiconductor, superresolution

Klíčová slova v angličtině

near-field optics, spectroscopy, interface, semiconductor, superresolution

Autoři

LÉTAL, P., BRÜSTLOVÁ, J., TOMÁNEK, P., DOBIS, P., GRMELA, L.

Vydáno

10.09.1998

Místo

Brno

ISBN

80-214-1198-8

Kniha

Proc. of 5th Int.Conf. Electronic devices and systems 1998

Strany od

173

Strany počet

4

BibTex

@inproceedings{BUT7998,
  author="Petr {Létal} and Jitka {Brüstlová} and Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela}",
  title="Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)",
  booktitle="Proc. of 5th Int.Conf. Electronic devices and systems 1998",
  year="1998",
  pages="4",
  address="Brno",
  isbn="80-214-1198-8"
}