Detail publikačního výsledku

Synthesis of titanium phosphide by thermal ALD based on a novel phosphorus precursor

ZAZPE MENDIOROZ, R.; CHARVOT, J.; RODRIGUEZ PEREIRA, J.; HROMÁDKO, L.; KURKA, M.; BAISHYA, K.; SOPHA, H.; BUREŠ, F.; MACÁK, J.

Originální název

Synthesis of titanium phosphide by thermal ALD based on a novel phosphorus precursor

Anglický název

Synthesis of titanium phosphide by thermal ALD based on a novel phosphorus precursor

Druh

Článek WoS

Originální abstrakt

Herein, we present for the first time the synthesis of titanium phosphide (TixPy) by thermal ALD based on the use of in-house synthesized Tris(trimethyltin)phosphide (TMT3P) combined with titanium tetrachloride (TiCl4) as the P- and Ti-precursor, respectively. The deposition process demonstrated followed ALD principles and revealed an ALD window between 175 degrees C and 225 degrees C. The TixPy thin films grown on substrates of different nature were characterized by several techniques, showing granular surfaces and electrical resistivities of the order of hundreds of Ohms. The effects of different ALD parameters such as deposition temperature, dosing time of both precursors, and the type of substrate on the chemical composition were extensively assessed by X-ray photoelectron spectroscopy (XPS). Interestingly, the results yielded the deposition of P-rich titanium phosphide and showed that its chemical composition depends on the deposition temperature and the type of substrate. Based on XPS results, a tentative description of the TixPy growth as a function of the number of ALD cycles was provided.

Anglický abstrakt

Herein, we present for the first time the synthesis of titanium phosphide (TixPy) by thermal ALD based on the use of in-house synthesized Tris(trimethyltin)phosphide (TMT3P) combined with titanium tetrachloride (TiCl4) as the P- and Ti-precursor, respectively. The deposition process demonstrated followed ALD principles and revealed an ALD window between 175 degrees C and 225 degrees C. The TixPy thin films grown on substrates of different nature were characterized by several techniques, showing granular surfaces and electrical resistivities of the order of hundreds of Ohms. The effects of different ALD parameters such as deposition temperature, dosing time of both precursors, and the type of substrate on the chemical composition were extensively assessed by X-ray photoelectron spectroscopy (XPS). Interestingly, the results yielded the deposition of P-rich titanium phosphide and showed that its chemical composition depends on the deposition temperature and the type of substrate. Based on XPS results, a tentative description of the TixPy growth as a function of the number of ALD cycles was provided.

Klíčová slova

ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; GROWTH

Klíčová slova v angličtině

ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; GROWTH

Autoři

ZAZPE MENDIOROZ, R.; CHARVOT, J.; RODRIGUEZ PEREIRA, J.; HROMÁDKO, L.; KURKA, M.; BAISHYA, K.; SOPHA, H.; BUREŠ, F.; MACÁK, J.

Vydáno

15.05.2025

Nakladatel

ROYAL SOC CHEMISTRY

Místo

CAMBRIDGE

ISSN

2040-3372

Periodikum

Nanoscale

Svazek

17

Číslo

19

Stát

Spojené království Velké Británie a Severního Irska

Strany od

12406

Strany do

12415

Strany počet

10

URL

https://pubs.rsc.org/en/content/articlelanding/2025/nr/d5nr00457h

Plný text v Digitální knihovně

http://hdl.handle.net/11012/255194

BibTex

@article{BUT198247,
  author="Raúl {Zazpe Mendioroz} and Jaroslav {Charvot} and Jhonatan {Rodriguez Pereira} and Luděk {Hromádko} and Michal {Kurka} and Kaushik {Baishya} and Hanna Ingrid {Sopha} and Filip {Bureš} and Jan {Macák}",
  title="Synthesis of titanium phosphide by thermal ALD based on a novel phosphorus precursor",
  journal="Nanoscale",
  year="2025",
  volume="17",
  number="19",
  pages="12406--12415",
  doi="10.1039/d5nr00457h",
  issn="2040-3364",
  url="https://pubs.rsc.org/en/content/articlelanding/2025/nr/d5nr00457h"
}

Dokumenty

d5nr00457h