Detail publikace

An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference

KROLÁK, D. HORSKÝ, P. PLOJHAR, J.

Originální název

An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference

Anglický název

An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference

Jazyk

en

Originální abstrakt

This article proposes an electromagnetic compatibility improved bandgap voltage reference with a low current consumption of only 3.5 uA in an automotive environment with a wide temperature range from -40 degrees C to 160 degrees C and a high electromagnetic interference (EMI) robustness. The proposed reference is based on the well-known Brokaw bandgap with only five bipolar transistors in the bandgap core including collector current leakage compensation. We analyzed parasitic effects in the bandgap core such as the influence of parasitic capacitances between the substrate and the collectors of these bipolar transistors as well as the impact of the operational amplifier. We made recommendations on how to improve the bandgap EMI robustness. Simulation results were compared with measurements on a test chip. The measurement results showed excellent EMI robustness.

Anglický abstrakt

This article proposes an electromagnetic compatibility improved bandgap voltage reference with a low current consumption of only 3.5 uA in an automotive environment with a wide temperature range from -40 degrees C to 160 degrees C and a high electromagnetic interference (EMI) robustness. The proposed reference is based on the well-known Brokaw bandgap with only five bipolar transistors in the bandgap core including collector current leakage compensation. We analyzed parasitic effects in the bandgap core such as the influence of parasitic capacitances between the substrate and the collectors of these bipolar transistors as well as the impact of the operational amplifier. We made recommendations on how to improve the bandgap EMI robustness. Simulation results were compared with measurements on a test chip. The measurement results showed excellent EMI robustness.

Dokumenty

BibTex


@article{BUT157458,
  author="David {Krolák} and Pavel {Horský} and Jan {Plojhar}",
  title="An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference",
  annote="This article proposes an electromagnetic compatibility improved bandgap voltage reference with a low current consumption of only 3.5 uA in an automotive environment with a wide temperature range from -40 degrees C to 160 degrees C and a high electromagnetic interference (EMI) robustness. The proposed reference is based on the well-known Brokaw bandgap with only five bipolar transistors in the bandgap core including collector current leakage compensation. We analyzed parasitic effects in the bandgap core such as the influence of parasitic capacitances between the substrate and the collectors of these bipolar transistors as well as the impact of the operational amplifier. We made recommendations on how to improve the bandgap EMI robustness. Simulation results were compared with measurements on a test chip. The measurement results showed excellent EMI robustness.",
  address="IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",
  chapter="157458",
  doi="10.1109/TEMC.2019.2958926",
  howpublished="print",
  institution="IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",
  number="5",
  volume="62",
  year="2020",
  month="january",
  pages="2277--2284",
  publisher="IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",
  type="journal article in Web of Science"
}