Detail publikace

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

CHOBOLA, Z. LUŇÁK, M. VANĚK, J. HULICIUS, E.

Originální název

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

Anglický název

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

Jazyk

en

Originální abstrakt

This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.

Anglický abstrakt

This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.

Dokumenty

BibTex 


@inproceedings{BUT107614,
  author="Zdeněk {Chobola} and Miroslav {Luňák} and Jiří {Vaněk} and Eduard {Hulicius}",
  title="Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements",
  annote="This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs  quantum dots layer.  We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and   can by use as a quality indicator.",
  address="IEEE Serbie",
  booktitle="Proceedings of the International Conference on Microelectronics, ICM",
  chapter="107614",
  doi="10.1109/MIEL.2014.6842161",
  howpublished="online",
  institution="IEEE Serbie",
  number="1",
  year="2014",
  month="may",
  pages="349--352",
  publisher="IEEE Serbie",
  type="conference paper"
}