Publication detail

Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers

MOZALEV, A. VAZQUEZ, R. CALAVIA, R. BITTENCOURT, C. GISPERT-GUIRADO, F. LLOBET, E. HUBALEK, J.

Original Title

Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers

Type

abstract

Language

English

Original Abstract

Nanocomposite niobium-aluminium oxide films and columnlike nanostructured niobium oxide films are prepared by combining anodizing, chemical etching and annealing of sputtered Al/Nb metal layers. Under appropriate formation conditions, the films show dielectric or n-type semiconductor behavior. Potential applications are as active layers for chemical sensors and dielectrics for specific capacitors

Keywords

anodizing, niobium oxide, porous alumina, nanostructures, dielectric properties, sensors

Authors

MOZALEV, A.; VAZQUEZ, R.; CALAVIA, R.; BITTENCOURT, C.; GISPERT-GUIRADO, F.; LLOBET, E.; HUBALEK, J.

Released

14. 8. 2012

Publisher

ISE

Location

Linz, Austria

Pages from

1

Pages to

1

Pages count

1

BibTex

@misc{BUT96860,
  author="Alexander {Mozalev} and Rosa Maria {Vazquez} and Raul {Calavia} and Ca. {Bittencourt} and Francesc {Gispert-Guirado} and Eduard {Llobet} and Jaromír {Hubálek}",
  title="Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers",
  booktitle="9th International Symposium on Electrochemical Micro & Nanosystem Technology (EMNT2012)",
  year="2012",
  pages="1--1",
  publisher="ISE",
  address="Linz, Austria",
  note="abstract"
}