Publication detail

Floating gate MOSFET for low power applications

KHATEB, A., MUSIL, V.

Original Title

Floating gate MOSFET for low power applications

Type

conference paper

Language

English

Original Abstract

Circuits using floating-gate MOS transistors are well known from EPROMs, EEPROMs, and flash memories. Floating-gate circuits provide IC designers with a practical continuous-time capacitor-based technology, instead of the resistor-based technology used in discrete circuits. A floating gate occurs when we have no dc path to a fixed potential, precisely the effect traditionally avoided by many circuit designers and circuit simulators. The floating-gate voltage can modulate a channel between a source and drain and therefore can be used in computation. Capacitors coupling into this floating gate become effective gates of this transistor, where the gate strength depends upon the capacitor size. Floating-gate devices can become integral parts of continuous- time amplifiers and filters. In Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers and other applications.

Keywords

Microelectronics, floating-gate MOSFET, low power.

Authors

KHATEB, A., MUSIL, V.

RIV year

2003

Released

22. 9. 2003

Publisher

Zd. Novotný

Location

Brno

ISBN

80-214-2461-3

Book

Proceedings of the Socrates Workshop. Short Contributions

Edition number

první

Pages from

76

Pages to

79

Pages count

4

BibTex

@inproceedings{BUT9583,
  author="Fabian {Khateb} and Vladislav {Musil}",
  title="Floating gate MOSFET for low power applications",
  booktitle="Proceedings of the Socrates Workshop. Short Contributions",
  year="2003",
  number="první",
  pages="4",
  publisher="Zd. Novotný",
  address="Brno",
  isbn="80-214-2461-3"
}