Publication detail

A Study of Thin Oxide Films by Ellipsometry and AR XPS

TICHOPÁDEK, P., ŠIKOLA, T., NEBOJSA, A., NAVRÁTIL, K., ČECHAL, J., JURKOVIČ, P., BÁBOR, P.

Original Title

A Study of Thin Oxide Films by Ellipsometry and AR XPS

Type

journal article - other

Language

English

Original Abstract

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Key words in English

spectroscopic ellipsometry, AR XPS, ultrathin films

Authors

TICHOPÁDEK, P., ŠIKOLA, T., NEBOJSA, A., NAVRÁTIL, K., ČECHAL, J., JURKOVIČ, P., BÁBOR, P.

RIV year

2002

Released

1. 8. 2002

ISBN

0142-2421

Periodical

Surface and Interface Analysis

Year of study

34

Number

1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

531

Pages to

534

Pages count

4

BibTex

@article{BUT40890,
  author="Petr {Tichopádek} and Tomáš {Šikola} and Alois {Nebojsa} and Karel {Navrátil} and Jan {Čechal} and Patrik {Jurkovič} and Petr {Bábor}",
  title="A Study of Thin Oxide Films by Ellipsometry and AR XPS",
  journal="Surface and Interface Analysis",
  year="2002",
  volume="34",
  number="1",
  pages="4",
  issn="0142-2421"
}