Publication detail

A MATLAB Model of the Second Generation Switched Current Memory Cell

PAVLÍK, M. HÁZE, J. VRBA, R.

Original Title

A MATLAB Model of the Second Generation Switched Current Memory Cell

Type

conference paper

Language

English

Original Abstract

The paper deals with the design of the second generation memory cell MATLAB model. There are described errors of the second generation switched current (SI) memory cell and impact of the SI technique on the transfer function of the memory cell, too. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.

Keywords

switched current, memory cell, errors, model

Authors

PAVLÍK, M.; HÁZE, J.; VRBA, R.

RIV year

2009

Released

11. 10. 2009

Publisher

IEEE Computer Society

Location

Sliema

ISBN

978-0-7695-3832-7

Book

Proceedings The Second International Conference on Advances in Circuits, Electronics and Micro-electronics CENICS 2009

Edition

1

Edition number

1

Pages from

101

Pages to

104

Pages count

5

BibTex

@inproceedings{BUT30795,
  author="Michal {Pavlík} and Jiří {Háze} and Radimír {Vrba}",
  title="A MATLAB Model of the Second Generation Switched Current Memory Cell",
  booktitle="Proceedings The Second International Conference on Advances in Circuits, Electronics and Micro-electronics CENICS 2009",
  year="2009",
  series="1",
  number="1",
  pages="101--104",
  publisher="IEEE Computer Society",
  address="Sliema",
  doi="10.1109/CENICS.2009.27",
  isbn="978-0-7695-3832-7"
}