Publication detail

Growth of gallium on sillicon: A TOF-LEIS and AFM study

KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BARTOŠÍK, M., TOMANEC, O., ŠIKOLA, T.

Original Title

Growth of gallium on sillicon: A TOF-LEIS and AFM study

Type

conference paper

Language

English

Original Abstract

Growth of gallium on sillicon: A TOF-LEIS and AFM study

Key words in English

Ga, TOF, structural analysis, AFM

Authors

KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BARTOŠÍK, M., TOMANEC, O., ŠIKOLA, T.

RIV year

2004

Released

11. 11. 2004

Publisher

VUT v Brně

Location

Brno

ISBN

80-7355-024-5

Book

New Trend in Physics

Pages from

230

Pages to

233

Pages count

4

BibTex

@inproceedings{BUT14279,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Miroslav {Bartošík} and Ondřej {Tomanec} and M. {Draxler} and P. {Bauer} and Tomáš {Šikola}",
  title="Growth of gallium on sillicon: A TOF-LEIS and AFM study",
  booktitle="New Trend in Physics",
  year="2004",
  pages="4",
  publisher="VUT v Brně",
  address="Brno",
  isbn="80-7355-024-5"
}