Publication result detail

Study of CMOS-based FOCs Designed with Approximation in Two Frequency Decades

JEŘÁBEK, J.; KUBÁNEK, D.; ŠOTNER, R.; DVOŘÁK, J.; ŠEDA, P.; KOTON, J.

Original Title

Study of CMOS-based FOCs Designed with Approximation in Two Frequency Decades

English Title

Study of CMOS-based FOCs Designed with Approximation in Two Frequency Decades

Type

Paper in proceedings (conference paper)

Original Abstract

This study explores the design of fractional-order capacitors (FOCs) implemented using native n-channel MOS devices in TSMC 65 nm technology. Configurations consisting of four and five interconnected MOS segments are investigated, both considered in two variants, so-called shunted and non-shunted gates. A previously designed genetic algorithm-based program is applied to identify the best structures that approximate constant-phase admittance responses providing input admittance phase within a range of 5 to 85 degrees. The search for suitable solutions is conducted across four distinct frequency bands, enabling a detailed evaluation of the influence of both the topology type and frequency range for each phase value. The results provide insight into the capabilities and limitations of MOS-based Fractional-Order Element (FOE) approximants, offering guidance for their use in analog signal processing applications where fractional-order behavior is desired.

English abstract

This study explores the design of fractional-order capacitors (FOCs) implemented using native n-channel MOS devices in TSMC 65 nm technology. Configurations consisting of four and five interconnected MOS segments are investigated, both considered in two variants, so-called shunted and non-shunted gates. A previously designed genetic algorithm-based program is applied to identify the best structures that approximate constant-phase admittance responses providing input admittance phase within a range of 5 to 85 degrees. The search for suitable solutions is conducted across four distinct frequency bands, enabling a detailed evaluation of the influence of both the topology type and frequency range for each phase value. The results provide insight into the capabilities and limitations of MOS-based Fractional-Order Element (FOE) approximants, offering guidance for their use in analog signal processing applications where fractional-order behavior is desired.

Keywords

fractional-order element; MOS transistor; distributed element; frequency bands

Key words in English

fractional-order element; MOS transistor; distributed element; frequency bands

Authors

JEŘÁBEK, J.; KUBÁNEK, D.; ŠOTNER, R.; DVOŘÁK, J.; ŠEDA, P.; KOTON, J.

RIV year

2026

Released

03.11.2025

Publisher

IEEE

Location

Firenze, Italy

ISBN

979-8-3315-7675-2

Book

2025 17th International Congress on Ultra Modern Telecommunications and Control Systems and Workshops (ICUMT)

Pages from

101

Pages to

106

Pages count

6

URL

https://ieeexplore.ieee.org/document/11268557

BibTex

@inproceedings{BUT200248,
  author="{} and Jan {Jeřábek} and  {} and David {Kubánek} and  {} and Roman {Šotner} and  {} and Jan {Dvořák} and  {} and Pavel {Šeda} and  {} and Jaroslav {Koton}",
  title="Study of CMOS-based FOCs Designed with Approximation in Two Frequency Decades",
  booktitle="2025 17th International Congress on Ultra Modern Telecommunications and Control Systems and Workshops (ICUMT)",
  year="2025",
  pages="101--106",
  publisher="IEEE",
  address="Firenze, Italy",
  doi="10.1109/icumt67815.2025.11268557",
  isbn="979-8-3315-7675-2",
  url="https://ieeexplore.ieee.org/document/11268557"
}