Publication result detail

High-Matching Current-Starved Inverter for Two-Dimensional Vernier Time-to-Digital Converter

SVOBODA, M.; HORSKÝ, P.

Original Title

High-Matching Current-Starved Inverter for Two-Dimensional Vernier Time-to-Digital Converter

English Title

High-Matching Current-Starved Inverter for Two-Dimensional Vernier Time-to-Digital Converter

Type

Paper in proceedings (conference paper)

Original Abstract

This paper proposes a novel improved CurrentStarved Inverter (CS-INV) for application in a ring oscillator, integral to a 2D Vernier time to digital converter. Through the comparative analysis of two prevalent CS-INV topologies, we introduce a novel topology aimed at minimizing delay variation within the ring oscillator (caused by mismatches between CSINVs in the ring oscillator), which is essential for ensuring good Integral and Differential Nonlinearity. The primary objectives were to achieve minimal delay variation and to reduce current consumption, while ensuring functionality at the slowest PVT corners. The ring oscillator operates at 640 MHz and comprises 26 CS-INVs. The design, implemented in 65 nm CMOS technology, demonstrated a delay matching variation of 2.03 ps with a current consumption of 384 mu A. The performance metrics were substantiated through simulations using a high-sigma verification tool.

English abstract

This paper proposes a novel improved CurrentStarved Inverter (CS-INV) for application in a ring oscillator, integral to a 2D Vernier time to digital converter. Through the comparative analysis of two prevalent CS-INV topologies, we introduce a novel topology aimed at minimizing delay variation within the ring oscillator (caused by mismatches between CSINVs in the ring oscillator), which is essential for ensuring good Integral and Differential Nonlinearity. The primary objectives were to achieve minimal delay variation and to reduce current consumption, while ensuring functionality at the slowest PVT corners. The ring oscillator operates at 640 MHz and comprises 26 CS-INVs. The design, implemented in 65 nm CMOS technology, demonstrated a delay matching variation of 2.03 ps with a current consumption of 384 mu A. The performance metrics were substantiated through simulations using a high-sigma verification tool.

Keywords

current-starved inverter; delay cell; low power; matching; time-to-digital converter; Vernier

Key words in English

current-starved inverter; delay cell; low power; matching; time-to-digital converter; Vernier

Authors

SVOBODA, M.; HORSKÝ, P.

Released

23.05.2025

Publisher

IEEE

Location

Hnanice, Czechia

ISBN

979-8-3315-4447-8

Book

35th International Conference Radioelektronika-RADIOELEKTRONIKA-Annual

Pages from

1

Pages to

5

Pages count

5

URL

Full text in the Digital Library

BibTex

@inproceedings{BUT198699,
  author="Marek {Svoboda} and Pavel {Horský}",
  title="High-Matching Current-Starved Inverter for Two-Dimensional Vernier Time-to-Digital Converter",
  booktitle="35th International Conference Radioelektronika-RADIOELEKTRONIKA-Annual",
  year="2025",
  pages="1--5",
  publisher="IEEE",
  address="Hnanice, Czechia",
  doi="10.1109/RADIOELEKTRONIKA65656.2025.11008405",
  isbn="979-8-3315-4447-8",
  url="https://ieeexplore.ieee.org/document/11008405"
}

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