Publication result detail

Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs

TOMÍČEK, P.; BOUŠEK, J.

Original Title

Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs

English Title

Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs

Type

Paper in proceedings (conference paper)

Original Abstract

This paper presents a method of estimating gate oxide reliability and lifetime of commercially available MOSFETs. The estimation is calculated for the specific condition that is present when gate boosting is used as a gate driving method. The effects of overvoltage are presented as well as calculation of the expected lifetime of a MOSFET when gate boosting is used.

English abstract

This paper presents a method of estimating gate oxide reliability and lifetime of commercially available MOSFETs. The estimation is calculated for the specific condition that is present when gate boosting is used as a gate driving method. The effects of overvoltage are presented as well as calculation of the expected lifetime of a MOSFET when gate boosting is used.

Keywords

MOSFET, gate oxide reliability, lifetime, gate boosting

Key words in English

MOSFET, gate oxide reliability, lifetime, gate boosting

Authors

TOMÍČEK, P.; BOUŠEK, J.

Released

29.04.2025

Publisher

Brno University of Technology, Faculty of Elektronic Engineering and Communication

Location

Brno

ISBN

978-80-214-6321-9

Book

Proceedings I of the 31st Conference STUDENT EEICT 2025

Edition

1

Pages from

266

Pages to

270

Pages count

5

URL

https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2025_sbornik_1.pdf

BibTex

@inproceedings{BUT198661,
  author="Pavel {Tomíček} and Jaroslav {Boušek}",
  title="Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs",
  booktitle="Proceedings I of the 31st Conference STUDENT EEICT 2025",
  year="2025",
  series="1",
  pages="266--270",
  publisher="Brno University of Technology, Faculty of Elektronic Engineering and Communication",
  address="Brno",
  isbn="978-80-214-6321-9",
  url="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2025_sbornik_1.pdf"
}